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 2SA1952
Transistors
High-speed Switching Transistor (-60V, -5A)
2SA1952
Features 1) High speed switching. (tf : Typ. 0.15 s at IC = -3A) 2) Low VCE(sat). (Typ. -0.2V at IC/IB = -3/-0.15A) 3) Wide SOA. (safe operating area) 4) Complements the 2SC5103.
External dimensions (Unit : mm)
2SA1952
(1) 0.9 0.75
5.5 1.5
2.3
(2)
0.9
(3)
2.3
0.65
Absolute maximum ratings (Ta = 25C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits -100 -60 -5 -5 -10 1 10 150 -55~+150 Unit V V V A A(Pulse) W W(Tc=25C) C C
0.5 1.0 0.5
1.5 2.5 9.5
2.3
0.8Min.
5.1
C0.5
ROHM : CPT3 EIAJ : SC-63
Packaging specifications and hFE
Type Package hFE Code Basic ordering unit (pieces) 2SA1952 CPT3 Q TL 2500
Electrical characteristics (Ta = 25C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage DC current transfer ratio Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) hFE1 hFE2 fT Cob ton tstg tf Min. -100 -60 -5 - - - - - - 120 40 - - - - - Typ. - - - - - - - - - - - 80 130 - - - Max. - - - -10 -10 -0.3 -0.5 -1.2 -1.5 270 - - - 0.3 1.5 0.3 Unit V V V A A V V V V - - MHz pF s s s Conditions IC = -50A IC = -1mA IE = -50A VCB = -100V VEB = -5V IC/IB= -3A/ -0.15A IC/IB= -4A/ -0.2A IC/IB= -3A/ -0.15A IC/IB= -4A /-0.2A VCE = -2V , IC = -1A VCE = -2V , IC = -3A VCE = -10V , IE = 0.5A , f = 30MHz VCB = -10V , IE = 0A , f = 1MHz IC = -3A , RL = 10 IB1 = -IB2 = -0.15A VCC -30V
Transition frequency Output capacitance Turn-on time Storage time Fall time
Rev.A
6.5
(1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source)
1/2
2SA1952
Transistors
Electrical characteristics curves
-5
AA 0m m -9 -80
0mA
COLLECTOR CURRENT : IC (A)
-70mA
Tc =25C
-10 -5
COLLECTOR CURRENT : IC (A)
-50mA
-1 -0.5 -0.2 -0.1 -0.05 -0.02 -0.01 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 BASE TO EMITTER VOLTAGE : VBE (V)
DC CURRENT GAIN : hEF
-4
-10
-60mA
-2
Ta=100C 25C -25C
VCE= -2V Pulsed
1000 500 200 100 50 20 10 5 2 1 -0.01 -0.02 -0.05 -0.1 -0.2 -0.5 -1 Ta=100C 25C -25C
VCE= -2V Pulsed
-3
-40mA -30mA -20mA
-2
-1
-10mA IB=0A
0 0
-1
-2
-3
-4
-5
-2
-5
-10
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR CURRENT : IC (A)
Fig.1 Ground emitter output characteristics
Fig.2 Ground emitter propagation characteristics
Fig.3 DC current gain vs. collector current
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) BASE SATURATION VOLTAGE : VBE(sat) (V)
-10 -5 -2 -1 -0.5 -0.2 -0.1 -0.05 -0.02 -0.01 -0.01 -0.02 -0.05 -0.1 -0.2 -0.5 -1
VCE(sat)
1000
TRANSITION FREQUENCY: fT (MHz)
Ta= -25C 25C 100C
VBE(sat)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
IC/IB=20 Pulsed
500 200 100 50 20 10 5 2 1 0.001 0.002 0.005 0.01 0.02 0.05 0.1
Ta=25C VCE= -10A
10000 5000 2000 1000 500 200 100 50 20 10 -0.1 -0.2 -0.5 -1 -2
Ta=25C f=1MHz IE=0A
Ta=100C 25C -25C
-2
-5
-10
0.2
0.5
1
-5 -10 -20
-50 -100
COLLECTOR CURRENT : IC (A)
EMITTER CURRENT : IE (A)
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.4 Collector-emitter saturation voltage vs. collector current Base-emitter saturation voltage
Fig.5 Resistance ratio vs. emitter current
Fig.6 Collector output capacitance vs. collector-base voltage
10 5
IE=20IB1= -20IB2
tstg ton tf
TURN ON TIME : ton(s) STRAGE TIME : tstg(s) FALL TIME : tf(s)
2 1 0.5 0.2 0.1 0.05 0.02
0.01 -0.05 -0.1 -0.2 -0.5 -1
-2
-5 -10 -20
-50
COLLECTOR CURRENT : IC (A)
Fig.7 Switching characteristics
Rev.A
2/2
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1


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